Part Number Hot Search : 
MP1430 BZT52C10 VK06TLS INTERNA 10011 1C102 PN2907A PL27Z
Product Description
Full Text Search

UPD44325084F5-E37-EQ2-A - 4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165 4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165

UPD44325084F5-E37-EQ2-A_3874113.PDF Datasheet

 
Part No. UPD44325084F5-E37-EQ2-A UPD44325084F5-E50-EQ2-A UPD44325084F5-E40-EQ2-A UPD44325084F5-E40Y-EQ2-A
Description 4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165

File Size 390.54K  /  40 Page  

Maker

NEC, Corp.



Homepage
Download [ ]
[ UPD44325084F5-E37-EQ2-A UPD44325084F5-E50-EQ2-A UPD44325084F5-E40-EQ2-A UPD44325084F5-E40Y-EQ2-A Datasheet PDF Downlaod from Datasheet.HK ]
[UPD44325084F5-E37-EQ2-A UPD44325084F5-E50-EQ2-A UPD44325084F5-E40-EQ2-A UPD44325084F5-E40Y-EQ2-A Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for UPD44325084F5-E37-EQ2-A ]

[ Price & Availability of UPD44325084F5-E37-EQ2-A by FindChips.com ]

 Full text search : 4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165 4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165


 Related Part Number
PART Description Maker
CY7C1543KV18-400BZC CY7C1545KV18-450BZXI Sync SRAM; Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
2M X 36 QDR SRAM, 0.45 ns, PBGA165
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
CY7C1515AV18-200BZXI CY7C1526AV18-278BZXC CY7C1526 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
8M X 9 QDR SRAM, 0.45 ns, PBGA165
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
K7S1636U4C K7S1618U4C-EC330 512Kx36 & 1Mx18 QDR II b4 SRAM
QDR SRAM, PBGA165 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
Samsung semiconductor
Maxim Integrated Products, Inc.
CY7C1513JV18-250BZXC 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
Cypress Semiconductor, Corp.
CY7C1515KV18-250BZXI CY7C1515KV18-300BZC CY7C1515K 72-Mbit QDR II SRAM 4-Word Burst Architecture
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
http://
Cypress Semiconductor, Corp.
CY7C1426AV18 36-Mbit QDR-II SRAM 4-Word Burst Architecture(4字Burst结构,36-Mbit QDR-II SRAM)
Cypress Semiconductor Corp.
K7R161884B K7R161884B-FC16 K7R161884B-FC20 K7R1618 512Kx36 & 1Mx18 QDR II b4 SRAM 512Kx36
512Kx36 & 1Mx18 QDR II b4 SRAM
1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
CY7C1303AV25-100BZC CY7C1306AV25-100BZC CY7C1303AV Memory : Sync SRAMs
18-Mb Burst of 2 Pipelined SRAM with QDR(TM) Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR?/a> Architecture
Cypress Semiconductor
CAT64LC40ZJ CAT64LC40ZS CAT64LC40J-TE7 CAT64LC40J- 72-Mbit QDR™-II SRAM 2-Word Burst Architecture
72-Mbit QDR™-II SRAM 4-Word Burst Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL™ Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
SPI Serial EEPROM SPI串行EEPROM
72-Mbit QDR-II™ SRAM 2-Word Burst Architecture SPI串行EEPROM
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
Analog Devices, Inc.
UPD44325092BF5-E33-FQ1 PD44325092B-15 4M X 9 QDR SRAM, 0.45 ns, PBGA165
36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
Renesas Electronics Corporation
UPD44325084BF5-E33-FQ1 PD44325084BF5-E50-FQ1-A PD4 4M X 8 QDR SRAM, 0.45 ns, PBGA165
36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION
Renesas Electronics Corporation
CY7C1412V18-200BZCES CY7C1414V18-200BZCES CY7C1410 36-Mbit QDR-II SRAM 2-Word Burst Architecture
36-Mbit QDR-II™ SRAM 2-Word Burst Architecture
36-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
Cypress Semiconductor
 
 Related keyword From Full Text Search System
UPD44325084F5-E37-EQ2-A mosi program UPD44325084F5-E37-EQ2-A linear UPD44325084F5-E37-EQ2-A rectifier UPD44325084F5-E37-EQ2-A 电子元器件 UPD44325084F5-E37-EQ2-A Processors
UPD44325084F5-E37-EQ2-A Module UPD44325084F5-E37-EQ2-A video monitor UPD44325084F5-E37-EQ2-A Drain UPD44325084F5-E37-EQ2-A address UPD44325084F5-E37-EQ2-A Filter
 

 

Price & Availability of UPD44325084F5-E37-EQ2-A

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.15495014190674